GYXTW-4B1光缆技术参数

编号No.

项目Items

单位Unit

参数Specification

G.652D

1

模场直径Mode Field Diameter

1310nm

μm

9.2±0.4

1550nm

μm

10.4±0.5

2

包层直径Cladding Diameter

μm

124.8±0.7

3

包层不圆度Cladding Non-Circularity

%

≤0.7

4

芯/包层同心度误差Core-Cladding Concentricity Error

μm

≤0.5

5

涂覆层直径Coating Diameter

μm

245±5

6

涂覆层不圆度Coating Non-Circularity

%

≤6.0

7

包层/涂覆层同心度误差Cladding-Coating Concentricity Error

μm

≤12.0

8

光缆截止波长Cable Cutoff Wavelength

nm

λ_cc≤1260

9

衰减系数Attenuation(max.)

1310nm

dB/km

≤0.36

1550nm

dB/km

≤0.25